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VBE2153M Product details

Product introduction:

VBE2153M Product Introduction
Product Introduction
The VBE2153M is a high-performance P-channel MOSFET designed for high-voltage and high-current switching applications. It is packaged in TO252, single P-channel configuration, with a drain-source voltage (VDS) of -150V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is -2.9V, the RDS(ON) is 273mΩ (VGS = 10V), and the maximum continuous drain current (ID) is 10A. Using Trench technology, the VBE2153M provides efficient switching performance and superior power management capabilities.


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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -150V 20V(±V) -2.9V 10A 273(mΩ) Trench
Detailed parameters
- **Package:** TO252
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -150V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -2.9V
- **On-resistance (RDS(ON)):** 273mΩ @ VGS = 10V
- **Continuous leakage current (ID):** 10A
- **Technology:** Trench

Domain and module applications:

Application Examples
1. **Power Switch:**
VBE2153M is suitable for high voltage power switch applications. Its high withstand voltage and low on-resistance make it excellent in power management and power switching circuits, and can effectively control the switching state of high voltage power supplies.

2. **Reverse Protection Circuit:**
In applications where circuits need to be protected from reverse voltage damage, VBE2153M can be used as a reverse protection switch. Its negative drain-source voltage capability makes it suitable for protecting power supplies and loads from voltage reversal.

3. **Load Switch:**
In various load switch applications, such as motor control and battery management systems, VBE2153M is able to efficiently switch load states. Its high current capability and low on-resistance ensure the reliability and energy efficiency of load switch operation.

4. **High Voltage Power Conversion: **
VBE2153M is suitable for high voltage power conversion modules. Its high drain-source voltage and high current capability enable it to work effectively in power conversion applications, improving the reliability and performance of the overall system.

Overall, the VBE2153M MOSFET is a powerful P-channel component suitable for a variety of high voltage and high current applications, ensuring stable performance and efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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