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VBE1151M Product details

Product introduction:

VBE1151M MOSFET Product Introduction

VBE1151M is a high-performance N-channel MOSFET designed for medium-high voltage and medium current applications. It uses a TO-252 package and has a drain-source voltage (V_DS) of 150V and a gate-source voltage (V_GS) of ±20V. The threshold voltage (V_th) of this MOSFET is 1.89V, the on-state resistance (R_DS(ON)) is 100 mΩ (at V_GS of 10V), and it can withstand a continuous leakage current (I_D) of up to 15A. VBE1151M uses trench technology to provide good switching performance and stable current handling capabilities, and is suitable for a variety of application scenarios requiring medium-high voltage and medium current.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 150V 20V(±V) 1.89V 15A 100(mΩ) Trench
Detailed parameter description

1. **Package**: TO-252
- Provides good heat dissipation performance and moderate board area, suitable for various circuit design requirements.

2. **Configuration**: Single N-channel
- Suitable for various switch control circuits, improving circuit integration and flexibility.

3. **V_DS (drain-source voltage)**: 150V
- Supports high-voltage applications and can handle higher voltage switching requirements.

4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to adapt to different control voltage requirements.

5. **V_th (threshold voltage)**: 1.89V
- At this voltage, the MOSFET starts to turn on, ensuring stable operation under low-voltage control.

6. **R_DS(ON)**: 100 mΩ @ V_GS = 10V
- Relatively low on-resistance, slightly higher than high-performance MOSFETs, but still effectively reduces power consumption and improves switching efficiency.

7. **I_D (Continuous Drain Current)**: 15A
- Suitable for medium current applications and can handle moderate current loads.

8. **Technology**: Trench
- Provides good switching performance and stable current handling capabilities, suitable for a variety of medium and high voltage applications.

Domain and module applications:

Application Examples

**1. Power Management: **
- **Field**: Switching Power Supply
- **Example**: VBE1151M can be used in switching power supplies (SMPS), especially in high-voltage power module applications. Its high-voltage withstand capability and stable switching performance enable it to effectively handle high voltage and medium current loads in the power supply, improving the stability and efficiency of the power supply.

**2. Motor Control: **
- **Field**: Industrial Automation
- **Example**: In motor drive circuits, VBE1151M can be used for switching control of medium current motors. Due to its good switching performance and moderate current handling capability, it can ensure the smooth operation of motors in industrial automation systems.

**3. Electronic Switches: **
- **Field**: Home Appliances
- **Example**: Electronic switches used in home appliances, such as replacements for high-voltage relays. The high-voltage withstand capability and medium current handling capability of VBE1151M make it suitable for switch control applications in various home appliances.

**4. Inverter: **
- **Field**: Solar energy system
- **Example**: In solar inverters, VBE1151M can be used for inverter switch control to help convert DC power to AC power. Its high voltage capability and stable performance help improve the overall efficiency and reliability of the inverter.

**5. Battery protection: **
- **Field**: Battery management system
- **Example**: In battery management systems, VBE1151M is used to protect batteries from overcurrent and overvoltage. Its high voltage withstand capability and medium current handling capability ensure the safe and stable operation of the battery system.

In short, the VBE1151M MOSFET is a high-performance switching device for medium-high voltage and medium current applications, which is widely used in various electronic applications requiring stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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