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VBP15R11S Product details
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VBP15R11S Product Introduction
VBP15R11S is a high voltage single N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. The MOSFET has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, with a threshold voltage of 3.3V. It uses SJ_Multi-EPI technology to provide medium on-resistance, with an on-resistance of 380mΩ at VGS of 10V and a maximum drain current (ID) of 11A. VBP15R11S is suitable for high voltage switching, power regulation and protection circuits, and can maintain stable performance under high voltage conditions.
VBP15R11S is a high voltage single N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. The MOSFET has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, with a threshold voltage of 3.3V. It uses SJ_Multi-EPI technology to provide medium on-resistance, with an on-resistance of 380mΩ at VGS of 10V and a maximum drain current (ID) of 11A. VBP15R11S is suitable for high voltage switching, power regulation and protection circuits, and can maintain stable performance under high voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 30V（±V） | 3.3V | 11A | 380(mΩ) | SJ_Multi-EPI |
VBP15R11S Detailed Parameter Description
| Parameter| Value| Unit|
|--------------------|-------------------|------|
| Package Type| TO247 | |
| Configuration| Single N-channel| |
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Threshold Voltage (Vth) | 3.3 | V |
| On-Resistance (RDS(ON)) | 380 (VGS=10V) | mΩ |
| Maximum Drain Current (ID) | 11 | A |
| Technology| SJ_Multi-EPI | |
| Parameter| Value| Unit|
|--------------------|-------------------|------|
| Package Type| TO247 | |
| Configuration| Single N-channel| |
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Threshold Voltage (Vth) | 3.3 | V |
| On-Resistance (RDS(ON)) | 380 (VGS=10V) | mΩ |
| Maximum Drain Current (ID) | 11 | A |
| Technology| SJ_Multi-EPI | |
Domain and module applications：
VBP15R11S Application Fields and Modules
1. **High-Voltage Switching**:
VBP15R11S is very effective in high-voltage switching applications and is suitable for switching tasks that need to handle high voltages (500V). Its high voltage capability and reliable switching performance make it an ideal choice for power management and high-voltage control circuits, ensuring system stability and safety.
2. **Power Regulation**:
In power regulation applications, VBP15R11S is able to provide stable current control and regulation functions. Its medium on-resistance (380mΩ) and high voltage characteristics make it suitable for various power regulators and power regulators, helping to achieve efficient power conversion and management.
3. **Power Protection**:
This MOSFET performs well in power protection circuits and is suitable for high-voltage protection tasks such as overvoltage protection and overcurrent protection. Its high voltage capability and reliability ensure the safety of the power system and the protection of the equipment, effectively preventing power failure and damage.
4. **Inverters**:
VBP15R11S performs well in inverter applications and is suitable for switching and controlling high voltage inverter circuits. Its 500V drain-source voltage capability enables it to work stably in high voltage inverter designs, suitable for industrial and household inverter systems.
5. **Power Electronics**:
In power electronics, VBP15R11S is able to handle high voltage and medium current loads, suitable for power converters and high voltage switching applications. Its high voltage and medium on-resistance characteristics enable it to provide efficient switching and control in power electronics systems.
With its high voltage handling capability and medium current capability, VBP15R11S is suitable for a variety of high voltage and power conditioning applications, providing a reliable solution for power management, power protection and power electronics.
1. **High-Voltage Switching**:
VBP15R11S is very effective in high-voltage switching applications and is suitable for switching tasks that need to handle high voltages (500V). Its high voltage capability and reliable switching performance make it an ideal choice for power management and high-voltage control circuits, ensuring system stability and safety.
2. **Power Regulation**:
In power regulation applications, VBP15R11S is able to provide stable current control and regulation functions. Its medium on-resistance (380mΩ) and high voltage characteristics make it suitable for various power regulators and power regulators, helping to achieve efficient power conversion and management.
3. **Power Protection**:
This MOSFET performs well in power protection circuits and is suitable for high-voltage protection tasks such as overvoltage protection and overcurrent protection. Its high voltage capability and reliability ensure the safety of the power system and the protection of the equipment, effectively preventing power failure and damage.
4. **Inverters**:
VBP15R11S performs well in inverter applications and is suitable for switching and controlling high voltage inverter circuits. Its 500V drain-source voltage capability enables it to work stably in high voltage inverter designs, suitable for industrial and household inverter systems.
5. **Power Electronics**:
In power electronics, VBP15R11S is able to handle high voltage and medium current loads, suitable for power converters and high voltage switching applications. Its high voltage and medium on-resistance characteristics enable it to provide efficient switching and control in power electronics systems.
With its high voltage handling capability and medium current capability, VBP15R11S is suitable for a variety of high voltage and power conditioning applications, providing a reliable solution for power management, power protection and power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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