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VBM165R02S Product details
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1. VBM165R02S Product Introduction
VBM165R02S is a high voltage N-channel MOSFET in TO220 package. This MOSFET is designed for switching applications that require high voltage tolerance and supports drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V. It uses SJ_Multi-EPI technology with a threshold voltage (Vth) of 3.3V. At a gate-source voltage of 10V, the on-resistance is 2300mΩ, and it can handle a continuous drain current (ID) of up to 2A. VBM165R02S is suitable for scenarios that require high voltage and high power processing, such as high voltage power management and industrial control.
VBM165R02S is a high voltage N-channel MOSFET in TO220 package. This MOSFET is designed for switching applications that require high voltage tolerance and supports drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V. It uses SJ_Multi-EPI technology with a threshold voltage (Vth) of 3.3V. At a gate-source voltage of 10V, the on-resistance is 2300mΩ, and it can handle a continuous drain current (ID) of up to 2A. VBM165R02S is suitable for scenarios that require high voltage and high power processing, such as high voltage power management and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 30V（±V） | 3.3V | 2A | 2300(mΩ) | SJ_Multi-EPI |
II. Detailed parameter description of VBM165R02S
| Parameter| Value| Unit|
|------------------------|--------------------------|--------|
| Product model| VBM165R02S | |
| Package| TO220 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 650 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Threshold voltage (Vth) | 3.3 | V |
| On-resistance (RDS(ON)) | 2300 (VGS = 10V) | mΩ |
| Continuous drain current (ID) | 2 | A |
| Transient pulse drain current (ID(pulse)) | 6 | A |
| Maximum power consumption (Ptot) | 25 | W |
| Operating temperature range | -55 to +150 | °C |
| Storage temperature range | -55 to +150 | °C |
| Technology | SJ_Multi-EPI | |
| Parameter| Value| Unit|
|------------------------|--------------------------|--------|
| Product model| VBM165R02S | |
| Package| TO220 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 650 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Threshold voltage (Vth) | 3.3 | V |
| On-resistance (RDS(ON)) | 2300 (VGS = 10V) | mΩ |
| Continuous drain current (ID) | 2 | A |
| Transient pulse drain current (ID(pulse)) | 6 | A |
| Maximum power consumption (Ptot) | 25 | W |
| Operating temperature range | -55 to +150 | °C |
| Storage temperature range | -55 to +150 | °C |
| Technology | SJ_Multi-EPI | |
Domain and module applications：
III. Application Fields and Module Examples
The high voltage capability and high power handling capability of VBM165R02S make it excellent in many fields and applications, especially in high voltage environments. Here are a few specific application examples:
1. **High Voltage Power Switch**: In high voltage power management systems, VBM165R02S can be used as a high voltage switching element, such as high voltage DC-DC converters and power switches. Its high drain-source voltage and good power handling capability make it suitable for handling high voltage loads.
2. **Industrial Power**: In industrial automation and power control systems, VBM165R02S can be used for the control and protection of high voltage loads. Its high voltage specification and durability make it reliable in industrial applications, especially where high power switching is required.
3. **Power Conversion Equipment**: In power conversion and distribution equipment, such as inverters and power modules, VBM165R02S can be used as a key switching element. Its high voltage tolerance and high power handling capabilities help improve equipment efficiency and reliability.
4. **Power Protection System**: In power protection and overvoltage protection systems, the VBM165R02S can be used as a protection switch to ensure that the system remains safe under overvoltage or abnormal conditions. Its high voltage capability makes it particularly suitable for power protection applications.
These application examples demonstrate the key role of the VBM165R02S in high voltage environments, especially in high voltage power switches, power protection systems, and power conversion equipment.
The high voltage capability and high power handling capability of VBM165R02S make it excellent in many fields and applications, especially in high voltage environments. Here are a few specific application examples:
1. **High Voltage Power Switch**: In high voltage power management systems, VBM165R02S can be used as a high voltage switching element, such as high voltage DC-DC converters and power switches. Its high drain-source voltage and good power handling capability make it suitable for handling high voltage loads.
2. **Industrial Power**: In industrial automation and power control systems, VBM165R02S can be used for the control and protection of high voltage loads. Its high voltage specification and durability make it reliable in industrial applications, especially where high power switching is required.
3. **Power Conversion Equipment**: In power conversion and distribution equipment, such as inverters and power modules, VBM165R02S can be used as a key switching element. Its high voltage tolerance and high power handling capabilities help improve equipment efficiency and reliability.
4. **Power Protection System**: In power protection and overvoltage protection systems, the VBM165R02S can be used as a protection switch to ensure that the system remains safe under overvoltage or abnormal conditions. Its high voltage capability makes it particularly suitable for power protection applications.
These application examples demonstrate the key role of the VBM165R02S in high voltage environments, especially in high voltage power switches, power protection systems, and power conversion equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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