Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
DIP8 |
Dual-N+P |
±30V |
20V(±V) |
±1V |
7.2/-5A |
|
30(mΩ) |
25(mΩ) |
Trench |
Detailed parameter description
- **Package**: DIP8
- **Configuration**: Bipolar (N channel + P channel)
- **Maximum drain-source voltage (VDS)**: ±30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: ±1V
- **On-resistance (RDS(on))**:
- 30mΩ @ VGS = 4.5V
- 25mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 7.2A (N channel) / -5A (P channel)
- **Technology**: Trench technology
Domain and module applications:
Application fields and module examples
**VBG5325** is mainly applicable to the following fields and modules:
1. **Power management**: Its low on-resistance and bipolar design make it very suitable for power management systems such as voltage regulators and dual power switches. This MOSFET can provide efficient control during power conversion and voltage regulation, reducing power consumption and improving system efficiency.
2. **Battery management**: In the battery management system (BMS), the bipolar design of VBG5325 allows it to manage the charging and discharging processes at the same time, ensuring efficient and safe operation of the battery. Its high current handling capability enables it to adapt to a variety of battery types and capacities.
3. **Power tools**: In power tools such as electric drills and lithium battery power tools, this MOSFET can be used in motor drive circuits and power control modules. Its high switching speed and low on-resistance enable it to effectively control current, ensuring high efficiency and reliability of power tools.
4. **Consumer electronics**: In consumer electronics such as smart home appliances and portable devices, VBG5325 can be used for power management and load switching applications. Its bipolar design enables it to play an important role in circuits that need to control positive and negative power at the same time, improving product stability and energy efficiency.
In summary, the DIP8 package, low on-resistance and bipolar design of the VBG5325 MOSFET enable it to perform well in applications such as power management, battery management, power tools and consumer electronics. Its Trench technology ensures reliable performance in a variety of low-voltage and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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