**VBsemi ME2301B-VB Transistor**

**Product Specifications:**
- Silkscreen: VB2290
- Brand: VBsemi
- Package: SOT23
- Channel Type: P—Channel
- Maximum Drain Voltage: -20V
- Maximum Drain Current: -4A
- On Resistance: RDS(ON) = 57mΩ @ VGS=4.5V, VGS=12V
- Threshold Voltage: Vth = -0.81V

**Application Introduction:**
VBsemi ME2301B-VB is a P-channel field effect transistor in SOT23 package. Its key features include low drain resistance, suitability for low voltage applications and efficient current control, making it an ideal choice for a variety of electronic applications.

**Application fields and module examples: **
1. **Power switch module: **
ME2301B-VB is suitable for power switch module, which can be used to achieve efficient power switch control and improve power conversion efficiency. It has a wide range of applications in power adapters, chargers and other fields.

2. **Current control module: **
Due to its excellent current control characteristics, it can be used in current control modules, such as LED drive circuits, power management systems, etc., to provide reliable current regulation functions for electronic devices.

3. **Low-power electronic devices: **
In devices that require low-power design, such as portable electronic products, sensor nodes, etc., the low drain resistance and low-voltage application characteristics of ME2301B-VB can meet the design requirements.

4. **Low-voltage switching power supply: **
Applicable to low-voltage switching power supplies, such as solar chargers, small battery-powered devices, etc., to achieve effective control of the power supply.

Overall, the VBsemi ME2301B-VB transistor is suitable for a variety of application fields that require P-channel field-effect transistors, providing an efficient and reliable solution for circuit design in these fields.