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J168-VB A video explaining the datasheet parameters of a SOT23 packaged MOS tube
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**J168-VB Transistor**

- **Silkscreen:** VB264K
- **Brand:** VBsemi
- **Parameters:**
- Package Type: SOT23
- Channel Type: P—Channel
- Maximum Withstand Voltage (Maximum VDS): -60V
- Maximum Drain Current (Maximum ID): -0.5A
- RDS(ON):3000mΩ @ VGS=10V, VGS=20V
- Threshold Voltage (Threshold Voltage): -1.87V

- **Package:** SOT23

**Detailed parameter description and application introduction:**

J168-VB is a P-Channel trench MOSFET in SOT23 package. Its maximum withstand voltage is -60V and the maximum drain current is -0.5A. At VGS=10V and VGS=20V, RDS(ON) is 3000mΩ and the threshold voltage is -1.87V respectively.

**Application fields and examples:**

1. **Power switch module:** Applicable to power switch module, such as used as power switch in electronic equipment to achieve efficient power management.

2. **DC-DC converter:** Can be used in DC-DC converter module to help improve power conversion efficiency.

3. **Battery management system:** In scenarios where P-Channel MOSFET is required for battery management, such as over-discharge protection and charging control.

4. **Analog signal switch:** Due to its high withstand voltage and low drain current, it is suitable for analog signal switching and used in signal amplification circuits.

5. **LED lighting control:** In LED lighting systems, it can be used to control the brightness and switching of LED lights.

Please note that the above examples are for reference only and the actual application may vary depending on the specific design requirements. In design, please always refer to the data sheet and specification to ensure correct use and performance.

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