**VBsemi GN2305-VB Product Description: **

- **Silkscreen: ** VB2290
- **Brand: ** VBsemi
- **Parameters: **
- Package: SOT23
- Channel type: P—Channel
- Maximum drain current: -20V
- Maximum drain current: -4A
- On resistance (RDS(ON)): 57mΩ @ VGS=4.5V, VGS=12V
- Threshold voltage (Vth): -0.81V

- **Package: ** SOT23

**Detailed parameter description: **

- **Channel type: ** P—Channel Indicates that this is a P-channel field effect transistor, suitable for applications with small load current.

- **Maximum Drain Current:** The maximum drain current of -20V indicates that the transistor can still operate normally when the reverse voltage is 20V.

- **Maximum Drain Current:** The maximum drain current of -4A indicates that this transistor can handle a large current load.

- **On-resistance (RDS(ON)):** RDS(ON) of 57mΩ indicates the on-resistance between the drain and the source under given gate-source voltage conditions.

- **Threshold Voltage (Vth):** The threshold voltage of -0.81V indicates that below this voltage, the transistor will start to conduct.

**Application Introduction:**

GN2305-VB This P-Channel MOSFET is suitable for a variety of power management and switching applications, including but not limited to:

1. **Power Switch:** Due to its P-Channel characteristics, it is suitable for power switching circuits to achieve efficient power management.

2. **Current Limitation and Protection:** Can be used for current limitation and protection circuits to ensure that the current is within a safe range.

3. **Low Voltage System:** Suitable for low voltage systems to provide efficient power control.

**Example:**

GN2305-VB can be used in power management modules for portable electronic devices, such as smartphones, tablets, etc. Due to its compact SOT23 package and good electrical performance, it provides efficient power switching and management functions in a limited space, helping to extend battery life and improve the overall performance of the device.