**VBsemi 5HP01M-VB**

- **Silkscreen:** VB264K
- **Brand:** VBsemi
- **Parameters:**
- Package: SOT23
- Channel type: P—Channel
- Rated voltage: -60V
- Rated current: -0.5A
- On-state resistance (RDS(ON)): 3000mΩ@VGS=10V, VGS=20V
- Threshold voltage (Vth): -1.87V

**Package:** SOT23

**Detailed parameter description:**
- **Channel type:** P—Channel, indicating that this is a P-channel field effect transistor.
- **Rated voltage:** -60V, indicating that the maximum voltage that the transistor can withstand is -60V.
- **Rated current:** -0.5A, indicating that the maximum rated current of the transistor is -0.5A.
- **On-state resistance (RDS(ON)):** 3000mΩ@VGS=10V, VGS=20V, indicating that the resistance of the transistor when it is turned on is 3000 milliohms at a given gate-source voltage.
- **Threshold voltage (Vth):** -1.87V, indicating the gate-source voltage threshold at which the transistor starts to turn on.

**Application introduction:**
5HP01M-VB is suitable for various power management, amplification and switching circuits. Since it is a P-channel MOSFET, it may be particularly useful in certain power control and inverter designs.

**Example:**
This device can be used in power switching modules, power amplifiers, and DC-DC converters. For example, in a power management module, it can be used to control a load switch to improve efficiency. In an amplifier, it may be used to drive an audio amplifier circuit. In DC-DC converters, it can be used to achieve efficient power conversion.

**Note:** In specific applications, please refer to the device data sheet for more detailed electrical performance and design information.