**VBsemi 2SK209-VB MOSFET**

**Detailed parameter description:**
- Brand: VBsemi
- Product model: 2SK209-VB
- Package: SOT23
- Polarity: P-Channel
- Maximum drain voltage (VDS): -60V
- Maximum drain current (ID): -0.5A
- On-resistance (RDS(ON)): 3000mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1.87V

**Application introduction:**
2SK209-VB is a P-Channel type MOSFET suitable for a variety of circuit designs and application scenarios. Its main features include low on-resistance and moderate drain current, which make it widely used in different fields.

**Application fields and module examples:**
1. **Power management module:** Since 2SK209-VB has low on-resistance and moderate drain current, it can be used for power switch control in power management modules, which helps to improve efficiency and stability.

2. **Signal amplifier:** 2SK209-VB can be used as the off switch of the amplifier in the signal amplification circuit to help achieve precise control of the signal.

3. **Current control module:** Due to its P-Channel channel characteristics, this MOSFET is also suitable for current control modules, such as current sources.

Please note that the specific application needs to be determined according to the circuit design requirements and parameter matching.