**2SJ345-VB Transistor**

- **Silkscreen:** VB264K
- **Brand:** VBsemi
- **Parameters:**
- Package: SOT23
- Polarity: P—Channel
- Maximum withstand voltage: -60V
- Maximum current: -0.5A
- On-resistance: RDS(ON)=3000mΩ @ VGS=10V, VGS=20V
- Threshold voltage: Vth=-1.87V

- **Package:** SOT23

**Detailed parameter description:**
2SJ345-VB is a P—Channel field effect transistor in SOT23 package with the following characteristics: maximum withstand voltage of -60V and maximum current of -0.5A. The on-resistance is 3000mΩ (VGS=10V) and 3000mΩ (VGS=20V) at different gate-source voltages. The threshold voltage is -1.87V.

**Application Introduction:**
2SJ345-VB is suitable for a variety of electronic devices and modules, including but not limited to:
1. **Power Management Module:** Due to its P-Channel characteristics, it can achieve efficient energy consumption control in the power management module.

2. **Audio Amplifier:** Suitable for audio amplifier circuits to provide reliable signal amplification.

3. **Power Inverter:** In the power inverter, through its low on-resistance and moderate current capability, effective power inversion is achieved.

Please note that the above are only examples, and the actual application needs to be adjusted according to specific design requirements and circuit conditions.