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VBQG8218 Product details
Back to previous pageProduct introduction：
This product is a single-channel P-type MOSFET with the following characteristics:
- Withstand voltage: VDS can reach a maximum of -20V, VGS can reach a maximum of ±20V, suitable for a variety of application scenarios.
- Threshold voltage: Vth is -0.8V, allowing the MOSFET to operate normally under a certain voltage.
- On-resistance: When VGS is 2.5V, the on-resistance is 22mΩ; when VGS is 4.5V, the on-resistance is 18mΩ, with low on-resistance characteristics.
- Maximum current: ID can reach up to -10A, suitable for small and medium power circuits.
- Technology: Manufactured using Trench technology for high performance and reliability.
- Package: DFN6 (2X2), suitable for layout design in limited space.
- Withstand voltage: VDS can reach a maximum of -20V, VGS can reach a maximum of ±20V, suitable for a variety of application scenarios.
- Threshold voltage: Vth is -0.8V, allowing the MOSFET to operate normally under a certain voltage.
- On-resistance: When VGS is 2.5V, the on-resistance is 22mΩ; when VGS is 4.5V, the on-resistance is 18mΩ, with low on-resistance characteristics.
- Maximum current: ID can reach up to -10A, suitable for small and medium power circuits.
- Technology: Manufactured using Trench technology for high performance and reliability.
- Package: DFN6 (2X2), suitable for layout design in limited space.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN6(2X2) | Single-P | -20V | 20（±V） | -0.8V | -10A | 22(mΩ) | 18 (mΩ) | Trench |
Product model: VBQG8218
Brand: VBsemi
parameter:
-Single P
- VDS(V): -20
-VGS(㊣V): 20
- Vth(V): -0.8
- RDS(on) VGS=2.5V(m次): 22
- RDS(on) VGS=4.5V(m次): 18
- ID (A): -10
- Technology: Trench
Package: DFN6(2X2)
Brand: VBsemi
parameter:
-Single P
- VDS(V): -20
-VGS(㊣V): 20
- Vth(V): -0.8
- RDS(on) VGS=2.5V(m次): 22
- RDS(on) VGS=4.5V(m次): 18
- ID (A): -10
- Technology: Trench
Package: DFN6(2X2)
Domain and module applications：
This product is suitable for the following areas and modules:
1. Power management module: Due to its low on-resistance and reliable performance, it can be used in power switches and power regulators to improve system efficiency and stability.
2. Motor drive module: Able to withstand higher voltages and currents, suitable for applications such as DC motor drivers and electric vehicle controllers, providing reliable motor control.
3. LED light control module: By controlling the on and off states of MOSFET, the brightness adjustment and switch control of LED lights are realized, which is suitable for lighting system and display screen control.
1. Power management module: Due to its low on-resistance and reliable performance, it can be used in power switches and power regulators to improve system efficiency and stability.
2. Motor drive module: Able to withstand higher voltages and currents, suitable for applications such as DC motor drivers and electric vehicle controllers, providing reliable motor control.
3. LED light control module: By controlling the on and off states of MOSFET, the brightness adjustment and switch control of LED lights are realized, which is suitable for lighting system and display screen control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
