Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-P |
-30V |
20（±V） |
-1.7V |
-24A |
|
21 (mΩ) |
17 (mΩ) |
Trench |
**VBQG2317**
**Brand:** VBsemi
**parameter:**
- **Single P:** Single P-type field effect transistor
- **VDS(V):** Collector-source voltage: -30V
- **VGS(㊣V):** Gate-source voltage range: ㊣20V
- **Vth(V):** Threshold voltage: -1.7V
- **VGS=4.5V(m次):** Drain-source resistance when gate-source voltage is 4.5V: 20m次
- **VGS=10V(m次):** Drain-source resistance when gate-source voltage is 10V: 17m次
- **ID (A):** Drain current: -10A
- **Technology:** Channel process
- **Package:** DFN6(2X2)
Domain and module applications：
**Applicable areas and module examples:**
1. **Battery management module:** VBQG2317 can be used in the battery overcharge and over-discharge protection circuit in the battery management module. Its low drain-source resistance and moderate drain current enable it to effectively control the battery's charge and discharge process and extend the battery's service life.
2. **Low-power electronic equipment:** In low-power electronic equipment, VBQG2317 can be used in power management circuits and switching power supply modules. Its low threshold voltage and low drain-source resistance enable efficient power conversion, reducing device energy consumption and heat generation.
3. **Medical device control module:** In the medical device control module, VBQG2317 can be used to control the power switch and drive circuit of medical equipment. Its stable performance and high drain current enable it to reliably drive various medical devices, ensuring the safe and stable operation of medical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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