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VBQF2311 Product details

Product introduction:

VBsemi's Single P series product is a single P-channel field effect transistor (MOSFET). The Single P series MOSFET is a multi-functional, high-performance electronic device suitable for many different application fields and modules. VDS (drain-source voltage) is -30V, VGS (gate-source voltage) range is ±20V, and the threshold voltage (Vth) is -2.5V. The on-resistance is 17mΩ at VGS=4.5V, 9mΩ at VGS=10V, and the maximum drain current (ID) is -30A. These MOSFETs are manufactured using Trench technology and are packaged in DFN8 (3X3).

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-P -30V 20(±V) -2.5V -30A 17 (mΩ) 9 (mΩ) Trench
Brand: VBsemi
parameter:
-Single P
- VDS(V): -30
-VGS(㊣V): 20
- Vth(V): -2.5
- VGS=4.5V(m次): 17
- VGS=10V(m次): 9
- ID (A): -30
- Technology: Trench
Package: DFN8(3X3)

Domain and module applications:

This type of MOSFET is suitable for a variety of fields and modules and has a wide range of application prospects. For example,
In power management modules, these MOSFETs can be used for functions such as power switches, DC-DC converters, and power inverters.
Due to their low on-resistance and high voltage tolerance, they are also suitable for use in electric vehicle drive modules in electric vehicles (EVs), hybrid electric vehicles (HEVs) and electric bicycles (e-bikes). In addition, due to their high performance and reliability, they can also be used in motor drives and power switching units in industrial automation equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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