Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
DFN8(3X3) |
Single-N |
40V |
20(±V) |
1.8V |
28A |
|
15 (mΩ) |
13 (mΩ) |
Trench |
Product model: VBQF1410
Brand: VBsemi
parameter:
- Unipolar N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 40V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source on-resistance (m次) at VGS=4.5V: 15
- Drain-source on-resistance (m次) at VGS=10V: 13
- Maximum drain current (ID): 28A
- Technology: Trench (groove type)
Package: DFN8(3X3)
Domain and module applications:
for example:
1. **Power Management**: VBQF1410 can be used as a power switch tube in the power management module to adjust the output stability and efficiency of the power supply. Due to its moderate power characteristics, it performs well under moderate loads and power demands and is suitable for general power management applications.
2. **LED lighting**: In LED lighting systems, VBQF1410 can be used as a power switch tube in an LED driver to control the brightness and stability of LED lamp beads. Its small package and moderate power characteristics improve the performance and reliability of LED lighting systems.
3. **Industrial controller**: VBQF1410 can be used as a switch tube for the power control module in an industrial controller to control the start, stop and speed adjustment of industrial equipment. Due to its moderate power and on-resistance characteristics, it is suitable for medium power output of industrial controllers.
To sum up, the VBQF1410 field effect transistor is suitable for medium power and current applications, such as power management, LED lighting and industrial controllers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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