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VBQF1302 Product details

Product introduction:

This product is a single N-type MOSFET, suitable for circuits and modules requiring high performance switching

Its main parameters include:
- Maximum drain-source voltage (VDS) is 30V;
- The maximum gate-source voltage (VGS) is plus or minus 20V;
- Threshold voltage (Vth) is 1.7V;
- When the gate-source voltage is 4.5V, the on-resistance (RDS(on)) is 3mΩ;
- When the gate-source voltage is 10V, the on-resistance is 2mΩ;
- Maximum drain current (ID) is 70A;
- Made using Trench technology;
- Package is DFN8(3X3).

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 20(±V) 1.7V 70A 3 (mΩ) 2 (mΩ) Trench
parameter:
-Single N
- VDS(V): 30
- VGS(㊣V): 20
-Vth(V)ㄩ1.7
- RDS(on) VGS=4.5V(m次): 3
- RDS(on) VGS=10V(m次): 2
- ID (A): 70
- Technology: Trench
Package: DFN8(3X3)

Domain and module applications:

This MOSFET is suitable for circuits and modules that require high performance switching, especially in the following areas and modules:
- Power Management Modules: Due to its low on-resistance and high drain-source voltage, it is suitable for power switches and current regulators in power management modules.
- Electric vehicle control modules: can be used in motor controllers, drives and battery management systems in electric vehicles.
- Industrial automation module: In industrial automation systems, it can be used for switching power supply, motor control and temperature control modules.
- LED lighting module: suitable for modules such as power switches, dimmers and current regulators in LED lighting.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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