VBQF1252M Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 250V | 20(±V) | 3.5V | 10.3A | 125 (mΩ) | Trench |
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 250V
- Standard gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (miohms) at gate-source voltage 10V: 125
- Drain current (ID): 10.3A
- Technology: Trench
Package: DFN8(3X3)
Domain and module applications:
1. Power management module: Since the VBQF1252M has a high rated voltage and moderate drain current, it is suitable for various power management modules such as battery chargers and DC regulators. In the battery charger, it can be used as a power switching device in the charging circuit to achieve battery charging and current protection functions."
2. LED Driver: This MOSFET can be used in LED driver modules in LED lighting systems to achieve brightness adjustment and current control of LED lamps. Its moderate rated voltage and drain current make it a common power switching device in LED drivers.
3. Industrial control system: In industrial control systems, VBQF1252M can be used as a key component of industrial motor control modules, such as frequency converters and motor drivers. Its high rated voltage and stable performance ensure reliable operation and long-term stability of industrial control systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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