VBQF1101M Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 100V | 20(±V) | 1.8V | 4A | 150 (mΩ) | 130 (mΩ) | Trench |
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source resistance (m次) at VGS=4.5V: 150
- Drain-source resistance (m次) at VGS=10V: 130
- Maximum drain current (ID): 4A
- Technology: Channel
Package: DFN8(3X3)
Domain and module applications:
Because VBQF1101M has high drain-source resistance and moderate drain current capacity, it is suitable for use as a power switching device in power management modules. In the power management module, it can be used in power switches, battery charge and discharge management, voltage regulators and other circuits to ensure stable power supply and efficient energy consumption management of electronic equipment.
Example 2: Applicable to LED lighting module
Because VBQF1101M has a small package and moderate drain current capacity, it is suitable for use as power switching devices in LED lighting modules. In the LED lighting drive circuit, VBQF1101M can be used as the switching element of the LED lamp bead to realize the brightness adjustment and switching control of the LED lighting fixtures, improving the efficiency and flexibility of the lighting system.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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