VBQD4290U Product details
Product introduction:
With the following parameters: VDS (drain-source voltage) is -20V, VGS (gate-source voltage) range is ±20V, and threshold voltage (Vth) is -0.8V. The on-resistance is 108mΩ at VGS=4.5V, 90mΩ at VGS=10V, and the maximum drain current (ID) is -4A (negative numbers represent P-channel devices).
These MOSFETs are manufactured using Trench technology and are packaged in DFN8(3X2)-B.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X2)-B | Dual-P+P | -20V | 20(±V) | -0.8V | -4A | 108 (mΩ) | 90 (mΩ) | Trench |
Brand: VBsemi
parameter:
- Dual P+P
- VDS(V): -20
-VGS(㊣V): 20
- Vth(V): -0.8
- VGS=4.5V(m次): 108
- VGS=10V(m次): 90
- ID (A): -4
- Technology: Trench
Package: DFN8(3X2)-B
Domain and module applications:
In the field of power management, they can be used in switch-mode power supplies, DC-DC converters and power inverters to provide efficient power conversion and stable voltage output. In addition, in motor drive modules, they can be used in motor controllers and drive circuits to achieve precise control and efficient operation of motors. In addition, in power amplifiers and audio processing modules, they can be used for power amplification and signal processing in the output stage, providing high-quality audio amplification and processing effects.
Technical support:
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