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VBQA3316 Product details
Back to previous pageProduct introduction：
This product is a bipolar N+N channel field effect transistor with a rated drain-source voltage of 30V and a maximum drain current of 22A. At VGS=4.5V, the drain-source on-resistance It is 24mΩ, and its threshold voltage is 1.7V when VGS=10V. The package is DFN8(5X6)-B.
VBQA3316 is suitable for applications requiring bipolar power control and can balance the control and stability of positive and negative currents to a certain extent. Its small package and high efficiency make it suitable for electronic devices and systems requiring compact structure and high power density.
VBQA3316 is suitable for applications requiring bipolar power control and can balance the control and stability of positive and negative currents to a certain extent. Its small package and high efficiency make it suitable for electronic devices and systems requiring compact structure and high power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6)-B | Dual-N+N | 30V | 20（±V） | 1.7V | 22A | 24 (mΩ) | 18 (mΩ) | Trench |
Product model: VBQA3316
Brand: VBsemi
parameter:
- Bipolar N+N channel field effect transistor (Dual N+N)
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (m次) at VGS=4.5V: 24
- Drain-source on-resistance (m次) at VGS=10V: 18
- Maximum drain current (ID): 22A
- Technology: Trench (groove type)
Package: DFN8(5X6)-B
Brand: VBsemi
parameter:
- Bipolar N+N channel field effect transistor (Dual N+N)
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (m次) at VGS=4.5V: 24
- Drain-source on-resistance (m次) at VGS=10V: 18
- Maximum drain current (ID): 22A
- Technology: Trench (groove type)
Package: DFN8(5X6)-B
Domain and module applications：
for example:
1. **Wireless communication module**: VBQA3316 can be used as the switching tube of the power amplifier in the wireless communication module to control the amplification and transmission of radio frequency signals. Due to its bipolar characteristics, it can perform well in positive and negative current control and is suitable for high-efficiency output of wireless communication modules.
2. **Power Management**: In the power management system, VBQA3316 can be used as a power switch tube in a DC-DC converter to adjust the output stability and efficiency of the power supply. Its small package and high power characteristics improve power system performance and reliability.
3. **Motor control**: VBQA3316 can be used as a switching tube for the power driver in the motor control system to control the start, stop and speed adjustment of the motor. Its bipolar characteristics and high efficiency make it suitable for motor control systems requiring positive and negative current control and high power output.
To sum up, the VBQA3316 field effect transistor is suitable for bipolar power control applications, such as wireless communication modules, power management and motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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