Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
DFN8(5X6) |
Single-P |
-150V |
20(±V) |
-2V |
-22A |
|
70 (mΩ) |
65 (mΩ) |
Trench |
Detailed parameter description:
- Rated drain-source voltage (VDS): -150V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (m次) when gate-source voltage is 4.5V: 70m次
- Drain-source resistance (m次) when gate-source voltage is 10V: 65m次
- Quiescent drain current (ID): -22A
Domain and module applications:
Application introduction:
VBQA2157N is suitable for a variety of fields and modules. It has the characteristics of high-performance power switches and can be used in the following scenarios:
1. Medical equipment: This MOSFET can be used in power management modules in medical equipment, such as medical electronic equipment and medical image processing systems, to provide stable and reliable power supply.
2. Power tools: Among power tools, VBQA2157N can be used as the power switch module of electric drills, electric hammers and other tools to ensure the high efficiency and safety of the tools.
3. Solar photovoltaic inverter: suitable for power switch modules in solar photovoltaic inverters to achieve high-efficiency power conversion and stable output power.
4. Automobile battery management system: This MOSFET can be used in the power switch and charge and discharge control module in the automobile battery management system to ensure the safety and reliability of the automobile battery.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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