Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-P |
-100V |
20（±V） |
-2V |
-20A |
|
80 (mΩ) |
75 (mΩ) |
Trench |
has the following parameters:
The maximum drain-source voltage (VDS) is -100V, the maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -2V.
When the gate-source voltage is 4.5V, the drain-source resistance is 80m次; when the gate-source voltage is 10V, the drain-source resistance is 75m次.
Its maximum drain current (ID) is -20A, using trench technology (Trench).
This product is packaged in DFN8 (5X6).
Domain and module applications：
The VBQA2101M transistor is suitable for a variety of fields and modules. For example, in power management modules, it can be used in DC-DC converters, power switches and battery chargers. Due to its high drain-source voltage and low drain-source resistance, this transistor is particularly suitable for low-power power management and high-efficiency power control applications. In automotive electronic modules, it can be used for power distribution, motor control and light driving of vehicle electronic systems. Furthermore, in industrial automation modules it can be used for power switching, motor control and sensor interfaces.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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