VBQA1204N Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(5X6) | Single-N | 200V | 20(±V) | 3V | 30A | 38 (mΩ) | Trench |
- Product type: Single N-channel field effect transistor (Single N-MOSFET)
- Maximum drain-source voltage (VDS): 200V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 38
- Maximum drain current (ID): 30A
- Technology: Trench
-Package: DFN8(5X6)
Domain and module applications:
1. Power module: VBQA1204N is suitable for switching power supplies, DC-DC converters and inverters in power modules. Its high drain-source voltage and current characteristics ensure stable and efficient operation of the module, while low drain-source resistance reduces power consumption and losses.
2. LED lighting module: In the field of LED lighting, VBQA1204N can be used in modules such as LED drive power supply, lighting control and power management. Its high voltage and current capabilities can meet the high power and performance requirements of LED lighting equipment, while the DFN8 (5X6) package can provide good heat dissipation performance.
3. Automotive electronic modules: In the field of automotive electronics, VBQA1204N can be used in modules such as vehicle power management, motor drive and lighting control. Its high voltage and current capabilities can meet the high power and high performance requirements of automotive electronic equipment, while the DFN8 (5X6) package can meet the compact size and high-density integration requirements of automotive electronic modules.
Technical support:
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