Product introduction：
Product introduction of this model:
VBPB19R11S is a single-channel N-type MOSFET produced by VBsemi Company, using SJ_Multi-EPI technology and packaged in TO3P. This product has the following main features:
- The rated drain-source voltage (VDS) is 900V and can withstand higher voltages.
- The standard gate-source voltage (VGS) is ±30V and the gate threshold voltage (Vth) is 3.5V, making it suitable for a variety of drive circuits.
- When VGS=10V, the on-resistance is 580mΩ, which has low on-resistance, which is beneficial to reducing power consumption and improving efficiency.
- The maximum drain current (ID) is 11A, suitable for medium and high power applications.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO3P |
Single-N |
900V |
30（±V） |
3.5V |
11A |
|
|
580 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description of this model product:
1. Product model: VBPB19R11S
2. Brand: VBsemi
3. Parameters:
- Type: Single N-type MOSFET
- Technology: SJ_Multi-EPI
-Package: TO3P
- Rated drain-source voltage (VDS): 900V
- Standard gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 580m次
- Maximum drain current (ID): 11A
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial high-frequency power supply: VBPB19R11S can be used in switching power supplies, inverters and other modules in industrial high-frequency power supplies for power supply and power control of factory equipment.
2. High-end audio equipment: In high-end audio equipment, this type of MOSFET can be used in power amplifier circuits to provide high-fidelity audio output and sound quality performance.
3. High-performance electric vehicle drive system: VBPB19R11S can be used in the drive system of electric vehicles and hybrid vehicles to achieve high-efficiency and high-performance electric vehicle drive.
4. Industrial automation control: In industrial automation control systems, this type of MOSFET can be used for functions such as actuator control, sensor interface, and power management to realize factory automation production and intelligent control.
5. Solar inverter: In solar power generation systems, VBPB19R11S can be used in inverter modules to help convert solar power into AC power and achieve grid connection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
