VBPB18R11S Product details
Product introduction:
VBsemi's VBPB18R11S is a Single N MOSFET with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS, positive and negative) of 30V, and a gate threshold voltage (Vth) of 3.5V. The device is manufactured using SJ_Multi-EPI technology and is packaged in TO3P.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 800V | 30(±V) | 3.5V | 11A | 500 (mΩ) | SJ_Multi-EPI |
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 500
- Maximum drain current (ID): 11A
Domain and module applications:
1. Electric vehicle motor driver: Since VBPB18R11S has a high drain-source voltage and large drain current, it can be used in electric vehicle motor driver modules to provide reliable power output.
2. Industrial high-voltage power supply system: In the industrial field, VBPB18R11S can be used in the switching power supply module of the high-voltage power supply system to achieve efficient energy conversion and stable power output.
3. Solar Inverter: Due to its high voltage and high current characteristics, VBPB18R11S is suitable for the power module of solar inverter, which is used to convert solar power into usable AC power.
Technical support:
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