VBPB17R20S Product details
Product introduction:
VBsemi's VBPB17R20S is a single N-channel MOSFET with a drain-source voltage (VDS) of up to 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Multi-EPI technology and packaged in TO3P, it has high performance and reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 700V | 30(±V) | 3.5V | 20A | 210 (mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 210m次
- Maximum drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package:TO3P
Domain and module applications:
1. High-voltage power module: VBPB17R20S is suitable for modules such as switching power supplies, inverters and electric vehicle charging piles that require high voltage and high current, providing high efficiency and reliability.
2. Industrial motor control: In industrial motor drives, inverters, and motor control modules, this device can be used to achieve power switching solutions with high efficiency and precise control.
3. High-power LED lighting: In high-power LED lighting systems, VBPB17R20S can be used to drive high-brightness LED lamp beads and provide stable power output.
4. Electric vehicle charging piles: As a power switching element in electric vehicle charging piles, this device can provide high-efficiency and reliable power conversion to achieve fast charging and safety performance.
These are just some examples, actual application depends on specific design needs and system requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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