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VBPB16R15S Product details
Back to previous pageProduct introduction：
Product introduction:
VBsemi's VBPB16R15S is a single N-channel field effect transistor (MOSFET) manufactured using SJ_Multi-EPI technology. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 15A. This product is packaged in TO3P and is suitable for a variety of application scenarios.
VBsemi's VBPB16R15S is a single N-channel field effect transistor (MOSFET) manufactured using SJ_Multi-EPI technology. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 15A. This product is packaged in TO3P and is suitable for a variety of application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 30（±V） | 3.5V | 15A | 280 (mΩ) | SJ_Multi-EPI |
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 280
- Drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package:TO3P
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 280
- Drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package:TO3P
Domain and module applications：
Examples of applicable fields and modules:
1. Power switching modules: The high drain-source voltage and drain current of the VBPB16R15S make it ideal for use in high-power power switching modules such as power electronic converters and switching power supplies.
2. High frequency inverter: Due to its low on-resistance and high voltage capability, this MOSFET can be used in high-frequency inverters, such as solar inverters and variable frequency air conditioners.
3. Automotive electronics: In automotive electronic systems, this device can be used in power inverters and drives of electric vehicles to achieve efficient energy conversion and power control of electric vehicles.
4. Industrial high-voltage applications: In the fields of industrial automation and machinery, VBPB16R15S can be used in applications such as high-voltage power supplies, motor controls, and industrial electronic devices to provide reliable power switching and current control.
These areas and modules are just some examples of where the VBPB16R15S may be suitable, the actual application depends on the specific circuit design and requirements.
1. Power switching modules: The high drain-source voltage and drain current of the VBPB16R15S make it ideal for use in high-power power switching modules such as power electronic converters and switching power supplies.
2. High frequency inverter: Due to its low on-resistance and high voltage capability, this MOSFET can be used in high-frequency inverters, such as solar inverters and variable frequency air conditioners.
3. Automotive electronics: In automotive electronic systems, this device can be used in power inverters and drives of electric vehicles to achieve efficient energy conversion and power control of electric vehicles.
4. Industrial high-voltage applications: In the fields of industrial automation and machinery, VBPB16R15S can be used in applications such as high-voltage power supplies, motor controls, and industrial electronic devices to provide reliable power switching and current control.
These areas and modules are just some examples of where the VBPB16R15S may be suitable, the actual application depends on the specific circuit design and requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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