VBPB165R11S Product details
Product introduction:
VBsemi's VBPB165R11S is a single N-channel field effect transistor (MOSFET) manufactured using SJ_Multi-EPI technology. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 11A. This product is packaged in TO3P and is suitable for a variety of application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 650V | 30(±V) | 3.5V | 11A | 420 (mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 420
- Drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO3P
Domain and module applications:
1. Power switch module: VBPB165R11S is suitable for medium-power power switch modules, such as inverters, switching power supplies and motor controllers.
2. Solar inverter: This MOSFET can be used in the power switching circuit in a solar inverter to achieve conversion and stable output of solar energy.
3. Industrial drives: In the field of industrial automation, VBPB165R11S can be used in industrial drives and motor controllers to provide reliable power switching and current regulation.
4. High-voltage LED lighting: Due to its high voltage and current capabilities, this device can be used for current regulation and switching control in high-voltage LED lighting systems to provide stable lighting output.
The above areas and modules are just some examples of where the VBPB165R11S may be suitable, and the actual application depends on the specific circuit design and requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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