VBPB15R30S Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 500V | 30(±V) | 3.5V | 30A | 140 (mΩ) | SJ_Multi-EPI |
- Type: Single N type
- Maximum drain-source voltage (VDS): 500V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 140
- Maximum drain current (ID): 30A
- Technology: SJ_Multi-EPI
-Package:TO3P
Domain and module applications:
This single N-type power field effect transistor is suitable for a variety of fields and modules. Here are some examples:
1. Industrial field: In high-power industrial equipment, such as industrial power supplies, welding equipment and high-voltage motor drives, this product can be used as a power switching device to achieve efficient energy conversion and precise power control.
2. High-frequency communication systems: In radar systems, communication base stations and radio transmitters, this product can be used in power amplifiers and modulators to provide high-power output and stable signal amplification.
3. Medical equipment: In medical imaging equipment, laser therapy equipment and electrosurgical systems, this product can be used as a power switching device to achieve precise power regulation and efficient power conversion to ensure the reliability and stability of the equipment.
4. High-performance power module: In high-end servers, data centers and network equipment, this product can be used in power modules and power converters to provide efficient power management and stable power output to ensure stable operation and high-performance performance of the equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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