VBPB1254N Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 250V | 20(±V) | 3.5V | 60A | 40 (mΩ) | Trench |
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 250V
- Gate-source voltage (VGS) (㊣V): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source on-resistance (m次) at VGS=10V: 40m次
- Rated drain current (ID): 60A
- Technology: Trench structure (Trench)
Package: TO3P
Domain and module applications:
1. **Electric vehicle power system**:
VBPB1254N is suitable for power inverters and drive controllers in electric vehicle powertrains. Its high rated drain-source voltage and drain current capabilities make it suitable for use in powertrain systems for high-power electric vehicles such as electric vehicles, electric motorcycles and e-bikes.
2. **Industrial Power System**:
In industrial power systems, VBPB1254N can be used as power switches in high-voltage DC power supplies, power converters, inverters and other equipment. Its low drain-source on-resistance and high rated drain-source voltage make it suitable for a variety of industrial control systems and power transmission equipment.
3. **Solar Inverter**:
In solar inverters, VBPB1254N can be used as a power switching element in the inverter circuit. Its high rated drain-source voltage and drain current characteristics make it suitable for high-power solar photovoltaic power generation systems, improving the efficiency and reliability of the inverter.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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