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2SK2876-01MR-VB Product details
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### Product Introduction
**Model: 2SK2876-01MR-VB**
**Package: TO220F**
**Configuration: Single N-channel**
**Technology: Planar Technology**
The 2SK2876-01MR-VB is a high voltage N-channel MOSFET in a TO220F package for high voltage applications. Its 650V drain-source voltage (VDS) and 7A drain current (ID) enable it to excel in circuits that require high voltage output but relatively low current. The 1100mΩ on-resistance (RDS(ON)) @ VGS=10V ensures low power consumption and high efficiency.
**Model: 2SK2876-01MR-VB**
**Package: TO220F**
**Configuration: Single N-channel**
**Technology: Planar Technology**
The 2SK2876-01MR-VB is a high voltage N-channel MOSFET in a TO220F package for high voltage applications. Its 650V drain-source voltage (VDS) and 7A drain current (ID) enable it to excel in circuits that require high voltage output but relatively low current. The 1100mΩ on-resistance (RDS(ON)) @ VGS=10V ensures low power consumption and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turning threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: Planar technology
- **Package type**: TO220F
- **Configuration**: Single N-channel
Domain and module applications：
### Applications and Module Examples
The high voltage characteristics of the 2SK2876-01MR-VB make it suitable for a variety of applications:
1. **Power Management System**: This MOSFET can be used in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS) systems to help achieve high efficiency and reliability.
2. **Motor Driver**: In motor controllers and drive modules that require high voltage output but relatively low current, this MOSFET can provide stable current output.
3. **Industrial Control**: In industrial automation and robotic control systems, the 2SK2876-01MR-VB can be used for high voltage power management and drive circuits to ensure efficient operation of the equipment.
4. **LED Lighting**: In high power LED lighting systems, this MOSFET can be used in power supply and drive circuits to provide stable current output and efficient energy conversion.
5. **Electric vehicle charging pile**: Due to its high voltage characteristics, this MOSFET can be used in electric vehicle charging piles to provide efficient power conversion and current output.
The high voltage characteristics and low power consumption design of 2SK2876-01MR-VB make it an ideal choice for high voltage applications, which can meet the requirements of high performance MOSFET in various fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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