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2SK2872-01MR-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK2872-01MR-VB Product Introduction
2SK2872-01MR-VB is a single N-channel MOSFET produced by VBsemi and is packaged in TO220F. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V, this MOSFET can provide efficient and reliable performance in medium voltage applications. The product adopts planar technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 7A, and its on-resistance (RDS(ON)) is 1100mΩ at a VGS of 10V. This device is suitable for applications with medium voltage requirements and medium current.
2SK2872-01MR-VB is a single N-channel MOSFET produced by VBsemi and is packaged in TO220F. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V, this MOSFET can provide efficient and reliable performance in medium voltage applications. The product adopts planar technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 7A, and its on-resistance (RDS(ON)) is 1100mΩ at a VGS of 10V. This device is suitable for applications with medium voltage requirements and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. 2SK2872-01MR-VB Detailed parameter description
- **Package form**: TO220F
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: 30V (±)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: Planar technology
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: To be determined
- Operating temperature range: To be determined
Domain and module applications：
### 3. Application fields and module examples
2SK2872-01MR-VB MOSFET is suitable for various medium voltage application scenarios due to its medium voltage and medium current capabilities. Here are some specific application fields and modules:
1. **Power module**: In power modules that require medium voltage and medium current, 2SK2872-01MR-VB can provide reliable power switching and current control, so that the power module has better efficiency and reliability.
2. **Electric vehicle controller**: In medium voltage electric vehicle control systems, the high voltage handling capability and stable power output of 2SK2872-01MR-VB can improve the performance and driving efficiency of electric vehicles.
3. **Industrial control**: In industrial control systems that require medium voltage and medium current, such as motor drive, power regulation, etc., 2SK2872-01MR-VB can provide stable power control and current management to ensure stable operation of the equipment.
4. **UPS (Uninterruptible Power Supply)**: 2SK2872-01MR-VB can be used for power switching and current management in UPS systems to ensure continuous power supply and stable operation of power systems.
In general, 2SK2872-01MR-VB is an N-channel MOSFET suitable for medium voltage and medium power applications. It has high performance and stability and can meet the needs of various medium power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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