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2SK2847-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK2847-VB Product Introduction
2SK2847-VB is a single N-channel MOSFET produced by VBsemi, using TO3P package. With a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of 30V, this MOSFET can provide efficient and reliable performance in high-voltage applications. This product adopts SJ_Multi-EPI technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 9A, and the on-resistance (RDS(ON)) is 750mΩ at VGS of 10V. This device is suitable for applications with high voltage requirements and medium current.
2SK2847-VB is a single N-channel MOSFET produced by VBsemi, using TO3P package. With a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of 30V, this MOSFET can provide efficient and reliable performance in high-voltage applications. This product adopts SJ_Multi-EPI technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 9A, and the on-resistance (RDS(ON)) is 750mΩ at VGS of 10V. This device is suitable for applications with high voltage requirements and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### 2. 2SK2847-VB Detailed parameter description
- **Package form**: TO3P
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: 30V (±)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: To be determined
- Operating temperature range: To be determined
Domain and module applications：
### 3. Application fields and module examples
2SK2847-VB MOSFET is suitable for various high-voltage application scenarios due to its high-voltage and medium-current capabilities. Here are some specific application fields and modules:
1. **Power module**: In power modules that require high voltage and medium current, 2SK2847-VB can provide reliable power switching and current control, so that the power module has better efficiency and reliability.
2. **Industrial control**: In high-voltage industrial control systems, such as motor drives, industrial automation, etc., 2SK2847-VB can provide stable power control and current management to ensure stable operation of the equipment.
3. **Electric vehicle charger**: In electric vehicle chargers that require high-voltage fast charging, the high-voltage and high-efficiency switching characteristics of 2SK2847-VB enable it to quickly and reliably transmit power and improve charging efficiency.
4. **Medical equipment**: In some high-voltage medical equipment, such as X-ray generators, medical ultrasound machines, etc., 2SK2847-VB can provide stable power control and current management to ensure stable operation of the equipment.
In general, 2SK2847-VB is an N-channel MOSFET suitable for high-voltage and medium-power applications. It has high performance and stability and can meet the needs of various high-power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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