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2SK2845-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SK2845-VB**
**Package: TO252**
**Configuration: Single N-channel**
**Technology: SJ_Multi-EPI**
The 2SK2845-VB is a high voltage N-channel MOSFET in a TO252 package for high voltage applications. Its 900V drain-source voltage (VDS) and 2A drain current (ID) enable it to excel in circuits that require high voltage output but relatively low current. The 2700mΩ on-resistance (RDS(ON)) @ VGS=10V ensures low power consumption and high efficiency.
**Model: 2SK2845-VB**
**Package: TO252**
**Configuration: Single N-channel**
**Technology: SJ_Multi-EPI**
The 2SK2845-VB is a high voltage N-channel MOSFET in a TO252 package for high voltage applications. Its 900V drain-source voltage (VDS) and 2A drain current (ID) enable it to excel in circuits that require high voltage output but relatively low current. The 2700mΩ on-resistance (RDS(ON)) @ VGS=10V ensures low power consumption and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 900V | 3.5V | 2A | 2700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Turning threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2700mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO252
- **Configuration**: Single N-channel
Domain and module applications：
### Applications and Module Examples
The high voltage characteristics of the 2SK2845-VB make it suitable for a variety of applications:
1. **Power Management System**: This MOSFET can be used in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS) systems to help achieve high efficiency and reliability.
2. **Lighting System**: In LED lighting systems that require high voltage output, the 2SK2845-VB can be used in power supplies and drive circuits to provide stable current output.
3. **Medical Equipment**: In medical equipment such as X-ray generators and high voltage power modules, this model can provide efficient energy conversion and current output.
4. **Industrial Control**: In industrial automation and robot control systems, the 2SK2845-VB can be used for high voltage power management and drive circuits to ensure efficient operation of the equipment.
5. **Electric vehicle charging pile**: Due to its high voltage characteristics, this MOSFET can be used in electric vehicle charging piles to provide efficient power conversion and current output.
The high voltage characteristics and low power consumption design of 2SK2845-VB make it an ideal choice for high voltage applications, which can meet the requirements of high performance MOSFET in various fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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