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2SK2826-ZJ-VB Product details
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### Product Introduction
**Model: 2SK2826-ZJ-VB**
**Package: TO263**
**Configuration: Single N-channel**
**Technology: Trench Technology**
The 2SK2826-ZJ-VB is a high-performance N-channel MOSFET in a TO263 package for medium-voltage and high-current applications. Its 60V drain-source voltage (VDS) and 150A drain current (ID) enable it to excel in circuits that require high current output and operate at higher voltages. The 4mΩ on-resistance (RDS(ON)) @ VGS=10V ensures low power consumption and high efficiency.
**Model: 2SK2826-ZJ-VB**
**Package: TO263**
**Configuration: Single N-channel**
**Technology: Trench Technology**
The 2SK2826-ZJ-VB is a high-performance N-channel MOSFET in a TO263 package for medium-voltage and high-current applications. Its 60V drain-source voltage (VDS) and 150A drain current (ID) enable it to excel in circuits that require high current output and operate at higher voltages. The 4mΩ on-resistance (RDS(ON)) @ VGS=10V ensures low power consumption and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology type**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
Domain and module applications：
### Applications and Module Examples
The high performance characteristics of 2SK2826-ZJ-VB make it suitable for a variety of applications:
1. **Motor Driver**: In motor controllers and drive modules, this MOSFET can provide high efficiency and high current output to ensure stable operation of the motor.
2. **Power Module**: Due to its low resistance and high current characteristics, 2SK2826-ZJ-VB can be used in switching power supplies and DC-DC converters to provide high-efficiency energy conversion.
3. **Automotive Electronics**: In automotive electronic systems, such as electric vehicle battery management systems (BMS) and on-board chargers, this model can provide efficient power conversion and current output.
4. **Industrial Control**: In industrial automation and robot control systems, 2SK2826-ZJ-VB can be used for power management and drive circuits to ensure efficient operation of equipment.
5. **LED lighting**: In high-power LED lighting systems, this MOSFET can be used in power supplies and drive circuits to provide stable current output and efficient energy conversion.
The excellent electrical characteristics and reliability design of 2SK2826-ZJ-VB make it an ideal choice for medium-voltage, high-current applications, and can meet the requirements of various application fields for high-performance MOSFETs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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