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2SK2808-01MR-VB Product details
Back to previous pageProduct introduction：
### 1. 2SK2808-01MR-VB Product Introduction
2SK2808-01MR-VB is a single N-channel MOSFET produced by VBsemi, using TO220F package. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of 20V, this MOSFET can provide high efficiency and reliable performance in low-voltage applications. The product adopts trench technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 68A, and the on-resistance (RDS(ON)) is 2mΩ at VGS of 4.5V and 1mΩ at VGS of 10V. This device is suitable for applications with low voltage requirements and high current.
2SK2808-01MR-VB is a single N-channel MOSFET produced by VBsemi, using TO220F package. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of 20V, this MOSFET can provide high efficiency and reliable performance in low-voltage applications. The product adopts trench technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 68A, and the on-resistance (RDS(ON)) is 2mΩ at VGS of 4.5V and 1mΩ at VGS of 10V. This device is suitable for applications with low voltage requirements and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 30V | 1.7V | 68A | 2mΩ | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 30V | 1.7V | 68A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 30V | 1.7V | 68A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. 2SK2808-01MR-VB Detailed parameter description
- **Package form**: TO220F
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: 20V (±)
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 2mΩ
- @ VGS=10V: 1mΩ
- **Drain current (ID)**: 68A
- **Technology**: Trench technology
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: To be determined
- Operating temperature range: To be determined
Domain and module applications：
### 3. Application fields and module examples
2SK2808-01MR-VB MOSFET is suitable for various low-voltage and high-power application scenarios due to its low voltage and high current capabilities. Here are some specific application fields and modules:
1. **Power module**: In low-voltage power modules that require high efficiency and stable performance, 2SK2808-01MR-VB can provide reliable power switching and current control, so that the power module has better efficiency and reliability.
2. **Motor drive**: In low-voltage motor control systems, 2SK2808-01MR-VB can provide efficient current control and voltage regulation to ensure stable operation and high-efficiency conversion of the motor.
3. **Lighting system**: For LED lighting systems that require high brightness and high power, 2SK2808-01MR-VB can provide stable current and voltage output to improve lighting effects and energy utilization.
4. **Electric vehicle controller**: In electric vehicle control systems, the high current handling capability and low voltage characteristics of 2SK2808-01MR-VB can ensure stable and efficient power transmission, improving the performance and range of electric vehicles.
In general, 2SK2808-01MR-VB is an N-channel MOSFET suitable for low-voltage and high-power applications. It has high performance and stability and can meet the needs of various high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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