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2SK2796STL-E-VB Product details
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### 1. 2SK2796STL-E-VB Product Introduction
2SK2796STL-E-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for various low-voltage power electronic applications. This model has a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 18A. It has different on-resistances (RDS(ON)) at different gate-source voltages, showing excellent switching performance. Trench technology is used to enhance the conductive characteristics and stability of the device, making it perform well in low-voltage applications.
2SK2796STL-E-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for various low-voltage power electronic applications. This model has a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 18A. It has different on-resistances (RDS(ON)) at different gate-source voltages, showing excellent switching performance. Trench technology is used to enhance the conductive characteristics and stability of the device, making it perform well in low-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 60V | 1.7V | 18A | 85mΩ | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### 2. 2SK2796STL-E-VB Detailed Parameters
| Parameters | Value | Unit | Remarks |
|-------------------|-----------|------------------------------------------|
| **Package Type** | TO252 | | |
| **Configuration** | Single N-Channel| | |
| **Drain-Source Voltage (VDS)** | 60 | V | Maximum Ratings|
| **Gate-Source Voltage (VGS)** | 20 (±) | V | Maximum Ratings|
| **Threshold Voltage (Vth)** | 1.7 | V | Typical Value|
| **On-Resistance (RDS(ON))** | 85 | mΩ | When VGS=4.5V|
| **On-Resistance (RDS(ON))** | 73 | mΩ | At VGS=10V|
| **Continuous Drain Current (ID)** | 18 | A | Maximum Ratings|
| **Technology** | Trench | | Trench Structure|
Domain and module applications：
### 3. Application fields and examples
2SK2796STL-E-VB MOSFET is suitable for various low-voltage power applications and has a wide range of applications:
1. **Power management**: In low-voltage power management modules, this MOSFET can be used in regulators and DC-DC converters. Its low RDS(ON) value and high drain current make it an efficient power management solution.
2. **Battery management**: In battery charge and discharge control circuits, 2SK2796STL-E-VB can be used in battery protection circuits and charging management modules. Its low threshold voltage and low leakage current characteristics make it suitable for extending battery life and improving battery efficiency.
3. **LED driver**: In low-voltage LED lighting systems, this device can be used in LED drivers and lighting control modules. Its high performance and reliability help improve the efficiency and life of LED lamps.
4. **Automotive electronics**: In automotive electronic systems, 2SK2796STL-E-VB can be used for on-board power management, electric vehicle drives, and body control modules. Its high drain current and stability make it an ideal choice for automotive electronic systems.
In summary, 2SK2796STL-E-VB MOSFET has broad application prospects in power management, battery management, LED lighting, and automotive electronics, and can provide high-efficiency and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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