中文
English
2SK2796L-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model**: 2SK2796L-VB
**Package**: TO252
**Configuration**: Single N-channel
**Technology**: Trench
2SK2796L-VB is a high-performance single N-channel MOSFET that uses advanced trench technology to provide low on-resistance and high current handling capabilities. It is designed to meet the needs of a variety of power management and switching applications, providing excellent reliability and efficiency.
**Model**: 2SK2796L-VB
**Package**: TO252
**Configuration**: Single N-channel
**Technology**: Trench
2SK2796L-VB is a high-performance single N-channel MOSFET that uses advanced trench technology to provide low on-resistance and high current handling capabilities. It is designed to meet the needs of a variety of power management and switching applications, providing excellent reliability and efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 60V | 1.7V | 18A | 85mΩ | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **VDS** (drain-source voltage): 60V
- **VGS** (gate-source voltage): ±20V
- **Vth** (gate threshold voltage): 1.7V
- **RDS(ON)** (on-resistance):
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **ID** (drain current): 18A
- **VDS** (drain-source voltage): 60V
- **VGS** (gate-source voltage): ±20V
- **Vth** (gate threshold voltage): 1.7V
- **RDS(ON)** (on-resistance):
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **ID** (drain current): 18A
Domain and module applications：
### Applications and Module Examples
**Power Management**: 2SK2796L-VB performs well in power management modules and is suitable for DC-DC Converter and load switch applications. Its low on-resistance characteristics enable it to reduce power consumption and improve system efficiency in high-efficiency power conversion.
**Automotive Electronics**: In the automotive electronics field, this MOSFET can be used in electric power steering (EPS) and on-board power distribution modules. Its high current handling capability ensures reliable operation under high load conditions.
**Industrial Control**: In industrial automation and control systems, 2SK2796L-VB is suitable for motor drives and robot controllers. Its high reliability and durability enable it to work stably for a long time in harsh industrial environments.
**Consumer Electronics**: This MOSFET can also be used in power management circuits in various consumer electronics products such as laptops, desktop computers and mobile devices. Its efficient current handling and low power consumption characteristics make it an ideal choice for these applications.
2SK2796L-VB has become a key component in the design of various electronic and power systems due to its excellent performance and wide application areas.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
