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2SK2793-VB Product details
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### 1. 2SK2793-VB Product Introduction
2SK2793-VB is a single N-channel MOSFET produced by VBsemi in TO220F package. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V, this MOSFET can provide high efficiency and reliable performance in harsh environments. The product adopts planar technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 7A, and its on-resistance (RDS(ON)) is 1100 milliohms at a VGS of 10V. This device is very suitable for high voltage and high efficiency applications.
2SK2793-VB is a single N-channel MOSFET produced by VBsemi in TO220F package. With a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of 30V, this MOSFET can provide high efficiency and reliable performance in harsh environments. The product adopts planar technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 7A, and its on-resistance (RDS(ON)) is 1100 milliohms at a VGS of 10V. This device is very suitable for high voltage and high efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. 2SK2793-VB Detailed parameter description
- **Package form**: TO220F
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: 30V (±)
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology**: Planar technology
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: To be determined
- Operating temperature range: To be determined
Domain and module applications：
### 3. Application fields and module examples
2SK2793-VB MOSFET is widely used in various high-efficiency power electronic devices due to its high voltage and high current capabilities. Here are some specific application fields and modules:
1. **Power module**: Applicable to power conversion equipment that requires efficient switching capabilities, such as switching power supplies (SMPS) and uninterruptible power supplies (UPS). The high voltage and low on-resistance characteristics of 2SK2793-VB enable it to effectively manage and convert electrical energy and improve overall system efficiency.
2. **Motor drive**: In motor control systems, especially industrial motor drives, 2SK2793-VB can provide reliable high-voltage control and high-current drive to ensure smooth operation and efficient energy utilization of the motor.
3. **Solar inverter**: In photovoltaic systems, MOSFET is used to convert DC to AC. The high voltage tolerance and stable switching characteristics of 2SK2793-VB make it an ideal choice for solar inverters, improving system reliability and conversion efficiency.
4. **Lighting system**: Especially in high-power LED lighting and HID lamp drivers, 2SK2793-VB can regulate current and voltage through efficient switches to provide stable lighting output while reducing energy consumption.
5. **Electric vehicle charger**: In electric vehicle charging systems, the high current handling capability and high-efficiency switching characteristics of 2SK2793-VB enable fast and reliable power transmission and improve charging efficiency.
In general, 2SK2793-VB is a high-performance and widely used N-channel MOSFET that plays an important role in high-voltage and high-efficiency power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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