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2SK2789-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SK2789-VB is a single N-channel MOSFET produced by VBsemi in TO263 package. This MOSFET has high voltage resistance and conduction performance, suitable for a variety of power management and switching applications. Its advanced trench technology ensures efficient operation under high current and low on-resistance conditions, and is an indispensable key component in industrial and consumer electronics.
2SK2789-VB is a single N-channel MOSFET produced by VBsemi in TO263 package. This MOSFET has high voltage resistance and conduction performance, suitable for a variety of power management and switching applications. Its advanced trench technology ensures efficient operation under high current and low on-resistance conditions, and is an indispensable key component in industrial and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 1.8V | 45A | 35mΩ | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2789-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON)）**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench type
Domain and module applications：
### Application Fields and Module Examples
2SK2789-VB MOSFET is widely used in the following fields and modules:
1. **Power Management**:
- **DC-DC Converter**: 2SK2789-VB can be used in synchronous rectification and buck-boost converters. Due to its low on-resistance and high current handling capability, it can improve power conversion efficiency and reduce power loss.
- **Switching Power Supply (SMPS)**: In the switching power supply, 2SK2789-VB, as an efficient switching device, can work stably at high frequencies, which helps to reduce switching losses and improve conversion efficiency.
2. **Automotive Electronics**:
- **Electric Vehicle Charging System**: This MOSFET can be used as an efficient switching element in the charger of electric vehicles to ensure fast charging and efficient energy conversion.
- **Electric Power Steering System (EPS)**: Due to its high current handling capability and low on-resistance, 2SK2789-VB can provide stable and reliable power control in EPS systems.
3. **Consumer electronics**:
- **Laptops and mobile devices**: In the power management modules of these devices, the 2SK2789-VB helps to improve battery life and reduce device heat.
- **LED lighting**: In LED driver circuits, the use of the 2SK2789-VB can improve driver efficiency and extend the life of LEDs.
4. **Industrial control**:
- **Motor drive**: In industrial motor control systems, this MOSFET can provide efficient current switching and control, suitable for driving high-power motors.
- **Uninterruptible power supply (UPS)**: In UPS systems, the 2SK2789-VB is a key switching element to ensure a stable and reliable power supply when the power is switched.
In short, the 2SK2789-VB MOSFET is widely used in various high-performance power management and power conversion devices with its excellent electrical performance and efficient switching characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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