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2SK2767-01_1-VB Product details

Product introduction:

### 1. 2SK2767-01_1-VB Product Introduction

2SK2767-01_1-VB is a high-performance single N-channel MOSFET in a TO220 package with excellent voltage and current handling capabilities. It is designed to meet the requirements of high performance and reliability and is suitable for a variety of power electronics applications. This model has a drain-source voltage (VDS) of 900V and a continuous drain current (ID) of 5A, and an on-resistance (RDS(ON)) of only 1500mΩ at VGS=10V, demonstrating excellent switching performance. 2SK2767-01_1-VB utilizes SJ_Multi-EPI technology to enhance the thermal stability and durability of the device, enabling it to perform well in high-voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N-Channel 900V 3.5V 5A 1500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N-Channel SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N-Channel 900V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N-Channel 900V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N-Channel

### 2. 2SK2767-01_1-VB Detailed Parameter Description

| Parameter| Value| Unit| Remarks|
|-------------------|-----------|-----------------------------------------|
| **Package Type** | TO220 | | |
| **Configuration** | Single N-Channel| | |
| **Drain-Source Voltage (VDS)** | 900 | V | Maximum Rating|
| **Gate-Source Voltage (VGS)** | 30 (±) | V | Maximum Rating|
| **Threshold Voltage (Vth)** | 3.5 | V | Typical Value|
| **On-Resistance (RDS(ON))** | 1500 | mΩ | When VGS=10V|
| **Continuous Drain Current (ID)** | 5 | A | Maximum Rating|
| **Technology** | SJ_Multi-EPI | | Superjunction Multilayer Epitaxy Process|

Domain and module applications:


### III. Application Fields and Examples

2SK2767-01_1-VB MOSFET has a wide range of applicability in applications requiring high voltage and high efficiency:

1. **Power Conversion System**: This MOSFET can be used in DC-DC converters, inverters, and power modules. Its high VDS and low RDS(ON) characteristics make it superior in conversion efficiency and thermal management, and it is suitable for use in areas such as solar power generation systems and electric vehicle charging stations.

2. **Industrial Motor Drive**: In industrial motor drive applications, 2SK2767-01_1-VB can provide stable high-voltage current output, suitable for inverters and servo drive systems. This helps improve motor efficiency and reduce energy consumption.

3. **Uninterruptible Power Supply (UPS)**: For UPS systems that require reliable power management, this MOSFET provides efficient current transmission and switching characteristics to ensure that the system provides continuous power supply during power outages and protect the normal operation of critical equipment.

4. **Lighting system**: In efficient lighting solutions, 2SK2767-01_1-VB can be used for LED drivers and power management modules. Its high performance and reliability make it an ideal choice for intelligent lighting and energy-saving lighting systems.

In summary, 2SK2767-01_1-VB MOSFET has demonstrated excellent performance and application prospects in power conversion, industrial drives, UPS systems and efficient lighting.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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