中文
English
2SK2745-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
The 2SK2745-VB is a single N-channel MOSFET produced by VBsemi and packaged in TO3P. The device is designed for high-power applications and features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) capability of 210A. Its gate-source voltage (VGS) is ±20V, threshold voltage (Vth) is 3V, and it has an on-resistance (RDS(ON)) of 3.6mΩ at VGS=4.5V and 3mΩ at VGS=10V. Manufactured using Trench Technology, the 2SK2745-VB has excellent low on-resistance and high power characteristics.
The 2SK2745-VB is a single N-channel MOSFET produced by VBsemi and packaged in TO3P. The device is designed for high-power applications and features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) capability of 210A. Its gate-source voltage (VGS) is ±20V, threshold voltage (Vth) is 3V, and it has an on-resistance (RDS(ON)) of 3.6mΩ at VGS=4.5V and 3mΩ at VGS=10V. Manufactured using Trench Technology, the 2SK2745-VB has excellent low on-resistance and high power characteristics.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 60V | 3V | 210A | 3.6mΩ | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 3.6mΩ @ VGS=4.5V, 3mΩ @ VGS=10V
- **Continuous drain current (ID)**: 210A
- **Technology**: Trench Technology
Domain and module applications：
### Application Fields and Modules
2SK2745-VB is suitable for many high-power application scenarios, including but not limited to the following fields and modules:
1. **Power Management**: Suitable for power management modules such as high-power switching power supplies, inverters and DC-DC converters, with high current carrying capacity and low on-resistance.
2. **Electric Vehicle**: Can be used for motor drivers and battery management systems in electric vehicles, with high current and low on-resistance characteristics.
3. **Industrial Control**: Suitable for high-power switches and control modules in industrial control systems, such as high-power motor drives, welding equipment, etc.
4. **Power Inverter**: Used in solar inverters and other high-power power inverters to achieve efficient power conversion and control.
Through these application examples, it can be seen that 2SK2745-VB has a wide range of application prospects in high-power and high-current applications, and can meet the needs of various industrial and consumer electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
