VBP19R47S Product details
Product introduction:
VBsemi VBP19R47S is a Single N-type MOSFET with up to 900V drain-source voltage (VDS), 47A drain current (ID), and 30V gate-source voltage (VGS). Adopting SJ_Multi-EPI technology, it has stable and reliable performance. This product is suitable for various application scenarios and provides reliable power switching solutions for power electronic systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 30(±V) | 3.5V | 47A | 100 (mΩ) | SJ_Multi-EPI |
- Model: VBP19R47S
- Brand: VBsemi
- MOSFET type: Single N
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 100
- Drain current (ID): 47A
- Technology: SJ_Multi-EPI
-Package:TO247
Domain and module applications:
Examples of application areas and modules:
This product can be widely used in the following fields and modules:
1. Power electronics field: Power switches used in power electronic equipment such as power converters, inverters and DC-DC converters.
2. Industrial automation: used for power switch control in motor drives, frequency converters and industrial control systems.
3. Automotive electronics: suitable for automotive electronic control modules such as electric vehicles, hybrid vehicles and car chargers.
4. Solar and wind energy conversion: used for power conversion and control in solar inverters, wind power controllers and electrical energy storage systems.
5. Communication equipment: Suitable for power switch control modules in base stations, communication network equipment and data centers.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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