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2SK2735-VB Product details
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### Product Introduction
**2SK2735-VB** is a single N-channel MOSFET in TO252 package with low on-resistance and high current handling capability. The device has a rated drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a gate threshold voltage (Vth) of 1.7V. At VGS=4.5V, the on-resistance (RDS(ON)) is 9mΩ, and at VGS=10V it is 7mΩ, and the maximum drain current (ID) can reach 70A. Manufactured using Trench technology, it has good thermal characteristics and stability.
**2SK2735-VB** is a single N-channel MOSFET in TO252 package with low on-resistance and high current handling capability. The device has a rated drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a gate threshold voltage (Vth) of 1.7V. At VGS=4.5V, the on-resistance (RDS(ON)) is 9mΩ, and at VGS=10V it is 7mΩ, and the maximum drain current (ID) can reach 70A. Manufactured using Trench technology, it has good thermal characteristics and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 70A | 9mΩ | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2735-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS=4.5V, 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Model**: 2SK2735-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS=4.5V, 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
### Application fields and modules
**2SK2735-VB** is suitable for applications that require high current and low on-resistance, especially for the following fields and modules:
1. **Power management**:
- **Power switch**: Used as a power switch device in a switching power supply to provide efficient power switching function.
2. **Motor control**:
- **Power tools**: Used as a power switch device in power tools to provide efficient motor control.
3. **LED lighting**:
- **LED driver**: Used as a power switch device in an LED driver to provide stable LED lighting control.
4. **Battery management**:
- **Charger**: Used as a power switch device in a charger to provide efficient battery charging management.
5. **Automotive electronics**:
- **Automotive power system**: Used as a power switch device in an automotive power system to provide stable power output.
The 2SK2735-VB MOSFET has high current handling capability and low on-resistance, and excels in applications requiring high-performance power control and conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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