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VBP19R25S Product details

Product introduction:

Product introduction:
VBP19R25S is a single N-channel power MOSFET launched by VBsemi with excellent performance and reliability. It adopts SJ_Multi-EPI technology and combines it with advanced technology to ensure its stability and efficiency. Suitable for a variety of power circuits and modules, ideal for electronic equipment manufacturers.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 900V 30(±V) 3.5V 25A 138(mΩ) SJ_Multi-EPI
Detailed parameter description:
- Rated voltage (VDS): 900V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 138
- Maximum leakage current (ID): 25A

Domain and module applications:


Examples of applicable fields and modules:
1. Industrial power module: The high rated voltage and high current characteristics of VBP19R25S make it very suitable for use in industrial power modules, such as DC regulated power supplies and switching power supplies.
2. Electric vehicle charging piles: Due to its high efficiency and stability, VBP19R25S can be used as the power control module of electric vehicle charging piles to ensure safe and fast charging.
3. Solar inverter: In solar inverter, VBP19R25S can be used as a switching tube to convert the DC power collected by the solar panel into AC power to provide clean energy for home and commercial applications.

The above are just some examples, VBP19R25S has wide applicability in various power electronics applications and provides reliable solutions for product design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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