中文
English
2SK2717-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SK2717-VB is a single N-channel MOSFET in TO220F package. The device has high drain-source voltage (VDS) and low drain-source on-resistance (RDS(ON)), suitable for high voltage applications. The gate-source voltage (VGS) is 30V (±), and the threshold voltage (Vth) is 3.5V. The drain-source on-resistance is 2400mΩ@VGS=10V, and the maximum drain current (ID) is 6A.
2SK2717-VB is a single N-channel MOSFET in TO220F package. The device has high drain-source voltage (VDS) and low drain-source on-resistance (RDS(ON)), suitable for high voltage applications. The gate-source voltage (VGS) is 30V (±), and the threshold voltage (Vth) is 3.5V. The drain-source on-resistance is 2400mΩ@VGS=10V, and the maximum drain current (ID) is 6A.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 950V | 3.5V | 6A | 2400mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 950V | 3.5V | 6A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 950V | 3.5V | 6A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2717-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 950V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **Drain-source on-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 6A
- **Technology**: Plannar
- **Model**: 2SK2717-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 950V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **Drain-source on-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 6A
- **Technology**: Plannar
Domain and module applications：
### Application Fields and Modules
2SK2717-VB MOSFET is suitable for various high-voltage applications, such as:
1. **Power Inverter**: Used in high-voltage inverters in industrial and power systems to achieve DC to AC conversion, such as inverter modules in high-voltage DC transmission systems.
2. **Power Electronics**: Used in high-voltage power electronic devices, such as power modulators and power switch modules in high-voltage DC transmission systems.
3. **Electric Vehicle**: Suitable for high-voltage battery management systems and motor drives for electric vehicles, providing efficient power conversion and electric vehicle control.
4. **Industrial Automation**: Used in factory automation equipment and high-voltage industrial control systems to achieve efficient power control and regulation.
In summary, 2SK2717-VB MOSFET plays an important role in high-voltage electronic devices and systems and has broad application prospects.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
