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2SK2699-VB Product details
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### Product Introduction
2SK2699-VB is a single N-channel MOSFET produced by VBsemi and adopts TO3P package. The device is designed for high-voltage applications and has a drain-source voltage (VDS) of 600V and a continuous drain current (ID) capability of 11A. Its gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3.5V, and it has an on-resistance (RDS(ON)) of 380mΩ at VGS=10V. 2SK2699-VB is manufactured using multi-epitaxial technology (SJ_Multi-EPI Technology) and has high performance and reliability.
2SK2699-VB is a single N-channel MOSFET produced by VBsemi and adopts TO3P package. The device is designed for high-voltage applications and has a drain-source voltage (VDS) of 600V and a continuous drain current (ID) capability of 11A. Its gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3.5V, and it has an on-resistance (RDS(ON)) of 380mΩ at VGS=10V. 2SK2699-VB is manufactured using multi-epitaxial technology (SJ_Multi-EPI Technology) and has high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | 380mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel | 600V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N-Channel |
### Detailed parameter description
- **Package type**: TO3P
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Continuous drain current (ID)**: 11A
- **Technology**: Multi-epitaxy technology (SJ_Multi-EPI Technology)
Domain and module applications：
### Application Fields and Modules
2SK2699-VB is suitable for many high-voltage application scenarios, including but not limited to the following fields and modules:
1. **Power Management**: Suitable for power management modules such as high-voltage switching power supplies, inverters and DC-DC converters, with high voltage and moderate current carrying capacity.
2. **Electric Vehicle**: Can be used for motor drives in electric vehicles with appropriate voltage and current characteristics.
3. **Industrial Control**: Suitable for high-voltage switches and control modules in industrial control systems, such as robot control, PLC systems, etc.
4. **Power Inverter**: Used in solar inverters and other power inverters to achieve efficient conversion and control of electrical energy.
Through these application examples, it can be seen that 2SK2699-VB has a wide range of application prospects in high-voltage and medium-power applications, and can meet the needs of various industrial and consumer electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
