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2SK2689-01MR_05-VB Product details
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### 2SK2689-01MR_05-VB MOSFET Product Introduction
2SK2689-01MR_05-VB is a single N-channel MOSFET manufactured by VBsemi in TO220F package. The device is suitable for high power applications, with low drain-source voltage (VDS 30V) and high current carrying capacity (ID 68A). It adopts trench structure (Trench) technology, with extremely low on-resistance, suitable for circuit design requiring high power and low loss.
2SK2689-01MR_05-VB is a single N-channel MOSFET manufactured by VBsemi in TO220F package. The device is suitable for high power applications, with low drain-source voltage (VDS 30V) and high current carrying capacity (ID 68A). It adopts trench structure (Trench) technology, with extremely low on-resistance, suitable for circuit design requiring high power and low loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 30V | 1.7V | 68A | 2mΩ | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 30V | 1.7V | 68A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 30V | 1.7V | 68A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2SK2689-01MR_05-VB Detailed parameter description
- **Model**: 2SK2689-01MR_05-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 2mΩ @ VGS = 4.5V, 1mΩ @ VGS = 10V
- **Drain current (ID)**: 68A
- **Technology**: Trench structure (Trench)
Domain and module applications：
### Application fields and module examples
1. **Power Modules**:
2SK2689-01MR_05-VB can be used in high-power power modules as a switching element to help control the power output. Its high current carrying capacity and low on-resistance make it an ideal choice for high-power power module design.
2. **Motor Drives**:
In motor drives, this MOSFET can be used to control the start and stop and speed regulation of the motor. Its high current carrying capacity and low on-resistance make it excellent in motor drive applications.
3. **Automotive Electronics**:
2SK2689-01MR_05-VB is suitable for power control and management circuits in automotive electronics. Its high power characteristics and stability make it excellent in automotive electronics applications.
4. **Industrial Automation**:
In industrial automation equipment, this MOSFET can be used to control and regulate power and signals in the equipment. Its high reliability and stability make it an excellent performer in industrial automation applications.
The above are typical application scenarios of 2SK2689-01MR_05-VB in high-power applications. Its characteristics make it an ideal choice for a variety of high-power circuit designs, and can meet the application requirements of high power, efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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