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2SK2688-01S-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SK2688-01S-VB is a single N-channel MOSFET in TO263 package. The device has excellent conduction characteristics and switching performance, suitable for high current and low voltage electronic applications. The drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 1.7V. The drain-source on-resistance (RDS(ON)) is 18mΩ@VGS=4.5V and 12mΩ@VGS=10V. The maximum drain current (ID) is 50A.
2SK2688-01S-VB is a single N-channel MOSFET in TO263 package. The device has excellent conduction characteristics and switching performance, suitable for high current and low voltage electronic applications. The drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) is 20V (±), and the threshold voltage (Vth) is 1.7V. The drain-source on-resistance (RDS(ON)) is 18mΩ@VGS=4.5V and 12mΩ@VGS=10V. The maximum drain current (ID) is 50A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 50A | 18mΩ | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2688-01S-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **Drain-source on-resistance (RDS(ON)）**: 18mΩ @ VGS=4.5V, 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
### Application fields and modules
2SK2688-01S-VB MOSFET is suitable for high current and low voltage electronic applications, such as:
1. **Power management**: It is used in power management applications such as high current switching power supplies and DC-DC converters, and can provide efficient power conversion and stable performance.
2. **Motor drive**: It is suitable for applications such as DC motor drivers and stepper motor drivers that require high current control, and has low on-resistance and good conduction characteristics.
3. **Lighting applications**: It can be used in lighting applications such as LED drivers that require high power and stable performance, and can provide reliable power switching and dimming functions.
4. **Automotive electronics**: It is suitable for power management, motor drive and other modules in automotive electronic systems, and has voltage resistance and stability.
Through these application examples, it can be seen that 2SK2688-01S-VB MOSFET has a wide range of application prospects in high current and low voltage electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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