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2SK2684-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**2SK2684-VB** is a high-performance single N-channel MOSFET in TO252 package with excellent conduction performance and high reliability. Its rated drain-source voltage (VDS) is 30V, gate-source voltage (VGS) is ±20V, and gate threshold voltage (Vth) is 1.7V. At VGS=4.5V, RDS(ON) is 9mΩ; at VGS=10V, RDS(ON) is 7mΩ, and the maximum continuous leakage current (ID) can reach 70A. The device is manufactured using Trench technology and is suitable for high-performance, high-current applications.
**2SK2684-VB** is a high-performance single N-channel MOSFET in TO252 package with excellent conduction performance and high reliability. Its rated drain-source voltage (VDS) is 30V, gate-source voltage (VGS) is ±20V, and gate threshold voltage (Vth) is 1.7V. At VGS=4.5V, RDS(ON) is 9mΩ; at VGS=10V, RDS(ON) is 7mΩ, and the maximum continuous leakage current (ID) can reach 70A. The device is manufactured using Trench technology and is suitable for high-performance, high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 70A | 9mΩ | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2SK2684-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 9mΩ @ VGS=4.5V, 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
### Application Fields and Modules
**2SK2684-VB** can be widely used in power management and switching circuits that require high performance and high current, including but not limited to the following fields and modules:
1. **Power Management**:
- **DC-DC Converter**: As a power switching device, it provides efficient power conversion.
- **Battery Management System**: In battery management systems that require high current handling capabilities, it provides efficient power switching.
2. **Power Tools**:
- **Electric Vehicle Controller**: A power switching device in electric vehicle controllers that require high performance.
3. **Industrial Control**:
- **Industrial Power**: For power management and switching circuits in industrial equipment.
- **High-Performance Motor Control**: A power switching device in motor control systems that require high performance.
4. **LED Lighting**:
- **LED Driver**: As a power switching device in LED drivers, it provides efficient LED driving.
5. **Power Adapter**:
- **High-Performance Power Adapter**: The power switching device in the high-performance power adapter provides efficient power conversion.
2SK2684-VB MOSFET, with its high performance and high reliability, is suitable for various high-performance, high-current electronic devices and systems, providing them with efficient and stable power management and switch control functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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